FQPF90N10V2 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

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* 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tes.

Application

lowest Rds(on) is required. ® Features
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* 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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